2sa1417 / 2sc3647 no.2006-1/5 features ? adoption of fbet, mbit processes. ? high breakdown voltage and large current capacity. ? ultrasmall size making it easy to provide high-density small-sized hybrid ics. specifications ( ) : 2sa1417 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)2 a collector current (pulse) i cp (--)3 a collector dissipation p c 500 mw mounted on a ceramic board (250mm 2 5 0.8mm) 1.5 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (25)16 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)100ma (--0.22)0.13 (--0.6)0.4 v base-to-emitterr saturation voltage v be (sat) i c =(--)1a, i b =(--)100ma (--)0.85 (--)1.2 v continued on next page. * ; the 2sa1417 / 2s3647 are classified by 100ma h fe as follws: rank r s t h fe 100 to 200 140 to 280 200 to 400 marking 2sa1417: ac 2sc3647: cc ordering number : en2006c 80906 / 22006ea ms im / o3103tn (kt) / 71598ha (kt) / 3277ki / n255mw, ts 2sa1417 / 2sc3647 pnp / npn epitaxial planar silicon transistors high-voltage switching applications sanyo semiconductors data sheet any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan
2sa1417 / 2sc3647 no.2006-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0a (--)120 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)100 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0a (--)6 v turn-on time t on see specified test circuit. (80)80 ns storage time t stg see specified test circuit. (750)1000 ns fall time t f see specified test circuit. (40)50 ns package dimensions switching time test circuit unit : mm 7007a-004 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view v r r b v cc =50v v be = --5v + + 50 w input output r l 100 m f 470 m f pw=20 m s i b1 d.c. 1% i b2 10i b1 = --10i b2 =i c =0.7a for pnp, the polarity is reversed. i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a itr03542 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.4 --0.8 --1.2 --1.6 --2.0 0.4 0.8 1.2 1.6 2.0 0 itr03543 --20ma --30ma --10ma -- 5 ma -- 3 ma -- 2 ma --1ma i b =0 ma 2sa1417 2sc3647 i b =0 ma 20ma 30ma 50ma 40ma 10ma 5ma 3 ma 2ma 1ma --40ma
2sa1417 / 2sc3647 no.2006-3/5 itr03551 itr03550 2 0.01 57 73 0.1 257 323 1.0 10 100 2 3 2 3 5 7 2 1.0 57 73 2 2 10 57 3 100 10 100 2 3 5 7 3 5 7 itr03549 itr03548 itr03546 -- 5 -- 7 -- 7 -- 3 -- 2 -- 0.01 -- 0.1 -- 5 -- 7 -- 3 -- 2 -- 3 -- 2 -- 1.0 -- 0.8 -- 0.4 0 -- 1.2 -- 1.6 -- 2.4 -- 2.0 0.8 0.4 0 1.2 1.6 2.4 2.0 100 1000 5 7 3 2 5 7 3 100 1000 5 7 3 2 5 7 3 57 73 2 0.01 0.1 57 3 23 2 1.0 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03547 2sa1417 v ce = -- 5v 2sc3647 v ce =5v 2sa1417 v ce = -- 5v 2sc3647 v ce =5v -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c 2sa1417 2sc3647 2sa1417 2sc3647 2sa1417 / 2sc3647 v ce =10v 2sa1417 / 2sc3647 f= 1mhz 0 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 0 10 20 30 40 50 0 itr03545 itr03544 -- 40 -- 30 -- 50 -- 10 -- 20 0 2sc3647 i b =0 ma 2sa1417 --6ma --5ma --4ma --3ma --2ma --1ma i b =0 ma 0.5ma 2.5ma 3.0ma 3.5ma 4.0ma 2.0ma 1.5ma 1.0ma h fe -- i c h fe -- i c i c -- v be i c -- v be cob -- v cb base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe collector-to-base voltage, v cb -- v output capacitance, cob -- pf i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a 4.5ma 5.0ma for pnp minus sign is omitted. for pnp minus sign is omitted. f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz
2sa1417 / 2sc3647 no.2006-4/5 it10757 0 0.2 0.4 0.5 0.6 0.8 1.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 60 40 160 140 120 2sa1417 / 2sc3647 itr03554 -- 1.0 3 -- 10 5 7 5 7 3 2 0.01 3 0.1 5 7 7 5 2 3 1.0 5 5 7 2 3 2 7 -- 0.01 -- 0.1 57 3 2 -- 1.0 57 3 23 2 1.0 3 10 5 7 5 7 3 2 7 0.01 0.1 57 3 2 1.0 57 3 23 2 7 1.0 53 22 itr03555 itr03556 7 10 53 27 100 5 i cp =3a i c =2a 1ms 10ms 100 m s dc operation 25 c ta= -- 25 c 75 c 2sc3647 i c / i b =10 2sa1417 i c / i b =10 25 c ta= -- 25 c 75 c 2 -- 0.01 -- 0.1 57 73 2 -- 1.0 57 323 2 0.01 0.1 57 73 2 1.0 57 323 -- 1000 -- 100 -- 10 2 3 5 7 2 3 5 7 itr03552 100 10 2 3 5 7 1000 2 3 5 7 itr03553 2sc3647 i c / i b =10 2sa1417 i c / i b =10 -- 25 c 25 c ta=75 c -- 25 c 25 c tc=75 c 2sa1417 / 2sc3647 v be (sat) -- i c v be (sat) -- i c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv a s o for pnp minus sign is omitted. ta=25 c single pulse mounted on a ceramic board (250mm 2 5 0.8mm) p c -- ta collector-to-emitter voltage, v ce -- v collector current, i c -- a mounted on a ceramic board (250mm 2 5 0.8mm) ambient temperature, ta -- c collector dissipation, p c -- w infinite heat sink
2sa1417 / 2sc3647 no.2006-5/5 ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2006. specifications and information herein are subject to change without notice.
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